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STP20N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V DSS R DS( on) ID
STP20N10 100 V < 0.12 20 A
s TYPICAL RDS(on) = 0.09
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
3
s HIGH CURRENT CAPABILITY 2
1
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VD S Drain-source Voltage (V GS = 0) 100 V
V DG R Drain- gate Voltage (R GS = 20 k) 100 V
V GS Gate-source Voltage