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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG135
NPN 7GHz wideband transistor
Product specification 1995 Sep 13
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
DESCRIPTION PINNING
NPN silicon planar epitaxial transistor PIN DESCRIPTION
in a plastic SOT223 envelope, lfpage 4
1 emitter
intended for wideband amplifier
applications. The small emitter 2 base
structures, with integrated 3 emitter
emitter-ballasting resistors, ensure 4 collector
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
1 2 3
an excellent temperature profile.
Top view MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 145 C (note 1) 1 W
hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 C 80 130
fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; 7 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz; 16 dB
gain Tamb = 25 C
IC = 100 mA; VCE = 10 V; f = 800 MHz; 12 dB
Tamb = 25 C
Vo output voltage dim = 60 dB; IC = 100 mA; VCE = 10 V; 850 mV
RL = 75 ; Tamb = 25 C;
f(p+qr) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 145 C (note 1) 1 W
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 13 2
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
THERMAL CHARACTERISTICS
THERMAL
SYMBOL PARAMETER CONDITIONS
RESISTANCE
Rth j-s thermal resistance from junction to soldering up to Ts = 145 C (note 1) 30 K/W
point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V 1 A
hFE DC current gain IC = 100 mA; VCE = 10 V 80 130
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 2 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 7 pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 1.2 pF
fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; 7 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 100 mA; VCE = 10 V; 16 dB
gain f = 500 MHz; Tamb = 25 C
IC = 100 mA; VCE = 10 V; 12 dB
f = 800 MHz; Tamb = 25 C
Vo output voltage note 1 900 mV
note 2 850 mV
d2 second order intermodulation IC = 90 mA; VCE = 10 V; 58 dB
distortion VO = 50 dBmV; Tamb = 25 C;
f(p+q) = 450 MHz;
fp = 50 MHz; fq = 400 MHz
IC = 90 mA; VCE = 10 V; 53 dB
VO = 50 dBmV; Tamb = 25 C;
f(p+q) = 810 MHz;
fp = 250 MHz; fq = 560 MHz
Notes
1. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 445.25 MHz;
Vq = Vo 6 dB; fq = 453.25 MHz;
Vr = Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.
2. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 795.25 MHz;
Vq = Vo 6 dB; fq = 803.25 MHz;
Vr = Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
1995 Sep 13 3
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
;; ;;
;;
VCC
handbook, full pagewidth
L6 C4 C5
VBB L5
C3 C6
L3
output
R1 R2
75
C1 L1 L2 L4
input
DUT
75
C7
C2
R3 R4
MBB284
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO.
C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstripline 75 length 7 mm;
width 2.5 mm
L2 microstripline 75 length 22mm;
width 2.5 mm
L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L4 microstripline 75 length 19 mm;
width 2.5 mm
L5 Ferroxcube choke 5 H 3122 108 20153
L6 (note 1) 0.4 mm copper wire 25 nH length 30 mm
R1 metal film resistor 10 k 2322 180 73103
R2 (note 1) metal film resistor 200 2322 180 73201
R3, R4 metal film resistor 27 2322 180 73279
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness
1
16 inch; thickness of copper sheet 32 inch.
1
1995 Sep 13 4
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
handbook, full pagewidth
VBB VCC
C3 C5
R1 L5
R3
C1 L3 C6
75 75
L1 L2 L4
input output
C2 C7
R4 C4
R2 L6
MBB299
80 mm
handbook, full pagewidth
60 mm
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation distortion test printed-circuit board.
1995 Sep 13 5
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
MBB300 MBB294
1.2 160
handbook, halfpage
P handbook, halfpage
tot
(W)
1.0 h FE
0.8 120
0.6
0.4 80
0.2
0 40
0 50 100 150 200 0 40 80 120 160
Ts ( o C) I C (mA)
VCE = 10 V; Tj = 25 C.
Fig.5 DC current gain as a function of collector
Fig.4 Power derating curve. current.
MBB295 MBB296
3 8
handbook, halfpage handbook, halfpage
fT
C re
(GHz)
(pF)
6
2
4
1
2
0 0
0 4 8 12 16 20 0 40 80 120 160
VCB (V) I C (mA)
IE = 0; f = 1 MHz; Tj = 25 C. VCE = 10 V; f = 1 GHz; Tamb = 25 C.
Fig.6 Feedback capacitance as a function of Fig.7 Transition frequency as a function of
collector-base voltage. collector current.
1995 Sep 13 6
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
MBB292 MBB293
45 45
handbook, halfpage handbook, halfpage
d im d im
(dB) (dB)
50 50
55 55
60 60
65 65
70 70
20 40 60 80 100 120 20 40 60 80 100 120
I C (mA) I C (mA)
VCE = 10 V; Vo = 900 mV; Tamb = 25 C; VCE = 10 V; Vo = 850 mV; Tamb = 25 C;
f(p+qr) = 443.25 MHz. f(p+qr) = 793.25 MHz.
Fig.8 Intermodulation distortion as a function of Fig.9 Intermodulation distortion as a function of
collector current. collector current.
MBB291 MBB290
45 45
handbook, halfpage handbook, halfpage
d2 d2
(dB) (dB)
50 50
55 55
60 60
65 65
70 70
20 40 60 80 100 120 20 40 60 80 100 120
I C (mA) I C (mA)
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C; VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C
f(p+q) = 450 MHz. f(p+q) = 810 MHz.
Fig.10 Second order intermodulation distortion as Fig.11 Second order intermodulation distortion as
a function of collector current. a function of collector current.
1995 Sep 13 7
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
MEA951 MEA952
60 50
handbook, halfpage
Z handbook, halfpage
L ZL
()
50 ()
40
RL
40
RL
30
30
20
20
10
10
0
XL XL