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BUF410A
High voltage fast-switching NPN power transistor
Features
High voltage capability
Very high switching speed
Minimum lot-to-lot spread for reliable operation
Low base-drive requirements
Applications 2
3
1
Switch mode power supplies
Motor control TO-247
Description
The BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram
multi epitaxial planar technology for high switching
speeds and high voltage capacity. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Table 1. Device summary
Order code Marking Package Packaging
BUF410A BUF410A TO-247 Tube
March 2008 Rev 3 1/9
www.st.com 9
Electrical ratings BUF410A
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCEV Collector-emitter voltage (V BE = -1.5 V) 1000 V
VCEO Collector-emitter voltage (IB = 0) 450 V
VEBO Emitter-base voltage (IC = 0) 7 V
IC Collector current 15 A
ICM Collector peak current (tP < 5 ms) 30 A
IB Base current 3 A
IBM Base peak current (tP < 5 ms) 4.5 A
Ptot Total dissipation at Tc = 25