Text preview for : stw18nb40.pdf part of ST stw18nb40 . Electronic Components Datasheets Active components Transistors ST stw18nb40.pdf
Back to : stw18nb40.pdf | Home
STW18NB40
STH18NB40FI
N-CHANNEL 400V - 0.19 - 18.4 A TO-247/ISOWATT218
PowerMeshTM MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STW18NB40 400 V < 0.26 18.4 A
STH18NB40FI 400 V < 0.26 12.4 A
s TYPICAL RDS(on) = 0.19
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3
3
s VERY LOW INTRINSIC CAPACITANCES 2 2
1 1
s GATE CHARGE MINIMIZED
TO-247 ISOWATT218
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R DS(on) per area, INTERNAL SCHEMATIC DIAGRAM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW18NB40 STH18NB40FI
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 k) 400 V
VGS Gate- source Voltage