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STW18NK80Z
N-channel 800V - 0.34 - 19A - TO-247
Zener-protected SuperMESHTM Power MOSFET
General features
Type VDSS RDS(on) ID pW
STW18NK80Z 800V <0.38 19A 350W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
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TO-247
Description d
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established P ro
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special te
Internal schematic diagram
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care is taken to ensure a very good dv/dt
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capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
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MDmeshTM products.
Applications
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Switching application
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Order codes
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STW18NK80Z
Marking
W18NK80Z
Package
TO-247
Packaging
Tube
October 2006 Rev 4 1/14
www.st.com 14
Contents STW18NK80Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................. 7
3 Test circuit ................................................ 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STW18NK80Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 800 V
VGS Gate- source voltage