Text preview for : pbss4021px.pdf part of Philips pbss4021px . Electronic Components Datasheets Active components Transistors Philips pbss4021px.pdf



Back to : pbss4021px.pdf | Home

PBSS4021PX
20 V, 6.2 A PNP low VCEsat (BISS) transistor
Rev. 01 -- 1 April 2010 Product data sheet




1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4021NX.

1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -20 V
IC collector current - - -6.2 A
ICM peak collector current single pulse; - - -15 A
tp 1 ms
RCEsat collector-emitter IC = -4 A; [1] - 23 38 m
saturation resistance IB = -400 mA

[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS4021PX
20 V, 6.2 A PNP low VCEsat (BISS) transistor



2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter
2
2 collector
3 base 3


3 2 1 1
006aaa231




3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4021PX SC-62 plastic surface-mounted package; 3 leads SOT89


4. Marking
Table 4. Marking codes
Type number Marking code[1]
PBSS4021PX *6E

[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China


5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -20 V
VCEO collector-emitter voltage open base - -20 V
VEBO emitter-base voltage open collector - -5 V
IC collector current - -6.2 A
ICM peak collector current single pulse; - -15 A
tp 1 ms
IB base current - -1 A




PBSS4021PX_1 All information provided in this document is subject to legal disclaimers.