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2SA1585S
TO-92S Transistor (PNP)
1. EMITTER TO-92S
2. COLLECTOR
123 3. BASE
Features
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)
Excellent DC current gain characteristics.
Power dissipation
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -20 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Voltage -6 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 400 mW
Tj Junction Temperature 150
Tstg Storage Temperature Range -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -50A , IE=0 -20 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE=- 50A, IC=0 -6 V
Collector cut-off current ICBO VCB=-20V , IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC= -0.1A 120 560
Collector-emitter saturation voltage VCEsat IC= -2A, IB=-0.1A -0.5 V
VCE=-2V, IC=-0.5A
Transition frequency fT F=100MHz
200 MHz
CLASSIFICATION OF hFE
Q
Rank R s
Range 120-170 180-390 270-560
2SA1585S
TO-92S Transistor (PNP)
Typical Characteristics