Text preview for : cep50p03_ceb50p03.pdf part of CET cep50p03 ceb50p03 . Electronic Components Datasheets Active components Transistors CET cep50p03_ceb50p03.pdf



Back to : cep50p03_ceb50p03.pdf | Home

CEP50P03/CEB50P03
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -47A, RDS(ON) =20m @VGS = -10V.
RDS(ON) =32m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D

Lead free product is acquired.

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S



ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS