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SEMICONDUCTOR KTK211
N CHANNEL JUNCTION FIELD
TECHNICAL DATA EFFECT TRANSISTOR
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
L B L
FEATURES DIM MILLIMETERS
A _
2.93 + 0.20
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
B 1.30+0.20/-0.15
High Forward Transfer Admittance. C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
: |yfs| =9mS(Typ.)
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
Extremely Low Reverse Transfer Capacitance.
H 0.95
: Crss=0.1pF(Typ.) J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
C
P 7
J
Q 0.1 MAX
MAXIMUM RATING (Ta=25 )
K
M
CHARACTERISTIC SYMBOL RATING UNIT
VGDO 1. GATE
Gate-Drain Voltage -18 V
2. DRAIN
Gate Current IG 10 mA 3. SOURCE
Drain Power Dissipation PD 150 mW
Junction Temperature Tj 150
SOT-23
Storage Temperature Range Tstg -55 150
Marking
I DSS Rank Lot No.
Type Name
K
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS=-0.5V, VDS=0 - - -10 nA
Gate-Drain Breakdown Voltage V(BR)GDO IG=-100 A -18 - - V
Drain Current IDSS (Note) VGS=0, VDS=10V 1.0 - 15 mA
Gate-Source Cut-off Voltage VGS(OFF) VDS=10V, ID=1 A -0.4 - -4.0 V
Foward Transfer Admittance |yfs| VDS=10V, VGS=0, f=1kHz - 9 - mS
Reverse Transfer Capacitance Crss VGD=-10V, f=1MHz - 0.10 0.15 pF
Power Gain GPS VDD=10V, f=100MHz (Fig.) - 18 - dB
Noise Figure NF VDD=10V, f=100MHz (Fig.) - 2.5 3.5 dB
Note : IDSS Classification O:1.0 3.0, Y:2.5 6.0,
GR(G):5.0 10.0, BL(B):9.0 15.0
2003. 2. 25 Revision No : 2 1/3
KTK211
Fig. 100MHz GPS, NF TEST CIRCUIT
INPUT D 10pF OUTPUT
S RL=50
R g =50 G
10pF
0.005