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SEMICONDUCTOR KF3N80F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A C
This planar stripe MOSFET has better characteristics, such as fast
F
switching time, low on resistance, low gate charge and excellent
O
avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS
B
correction and switching mode power supplies. A _
10.16 + 0.2
G
B _
15.87 + 0.2
C _
2.54 + 0.2
FEATURES D _
0.8 + 0.1
E _
3.18 + 0.1
VDSS=800V, ID=3A
K
F _
3.3 + 0.1
Drain-Source ON Resistance : G _
12.57 + 0.2
L M
R H _
0.5 + 0.1
RDS(ON)(Max)=4.2 @VGS=10V
J
J _
13.0 + 0.5
Qg(typ.)=12nC K _
3.23 + 0.1
D
L 1.47 MAX
M 1.47 MAX
N N H
_
MAXIMUM RATING (Tc=25 ) N 2.54 + 0.2
O _
6.68 + 0.2
Q _
4.7 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT 1. GATE
2. DRAIN R _
2.76 + 0.2
Q
1 2 3
Drain-Source Voltage VDSS 800 V 3. SOURCE
Gate-Source Voltage VGSS 30 V
@TC=25 3*
ID TO-220IS (1)
Drain Current @TC=100 1.9* A
Pulsed (Note1) IDP 6*
Single Pulsed Avalanche Energy EAS 175 mJ
(Note 2)
Repetitive Avalanche Energy EAR 4.4 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 32 W
PD
Dissipation Derate above 25 0.25 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 3.9 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2012. 7. 26 Revision No : 0 1/6
KF3N80F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 800 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.8 - V/
Drain Cut-off Current IDSS VDS=800V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.5A - 3.4 4.2
Dynamic
Total Gate Charge Qg - 12 -
VDS=480V, ID=3A
Gate-Source Charge Qgs - 6 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2 -
Turn-on Delay time td(on) - 25 -
VDD=400V
Turn-on Rise time tr - 27 -
ID=3A ns
Turn-off Delay time td(off) - 60 -
RG=25 (Note4,5)
Turn-off Fall time tf - 30 -
Input Capacitance Ciss - 520 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 60 - pF
Reverse Transfer Capacitance Crss - 9 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS Pulsed Source Current ISP - - 12
Diode Forward Voltage VSD IS=3A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=3A, VGS=0V, - 450 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/us - 3.0 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =37mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF3N80
F 001 2
1 PRODUCT NAME
2 LOT NO
2012. 7. 26 Revision No : 0 2/6
KF3N80F
Fig1. ID - VDS Fig2. ID - VGS
1
10 10
VGS=10V VDS=20V
Drain Current ID (A)
Drain Current ID (A)
VGS=6V
VGS=5V
25 C
0
1 10
100 C
-1
0.1 10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 6
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
5
1.1
4 VGS=6V
VGS=10V
1.0 3
2
0.9
1
0.8 0
-100 -50 0 50 100 150 0 1 2 3 4
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
1
10 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 3A
2.5
Normalized On Resistance
2.0
100 C
25 C
0
10 1.5
1.0
0.5
-1
10 0.0
0.4 0.6 0.8 1.0 1.2 1.4 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2012. 7. 26 Revision No : 0 3/6
KF3N80F
Fig 7. C - VDS Fig8. Qg- VGS
1000 12
ID=3A
Gate - Source Voltage VGS (V)
Ciss 10
Capacitance (pF)
100 8
VDS = 480V
Coss 6
10 4
Crss
2
1 0
0 10 20 30 40 0 2 4 6 8 10 12 14
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
10
10