Text preview for : buk7506-30_1.pdf part of Philips buk7506-30 1 . Electronic Components Datasheets Active components Transistors Philips buk7506-30_1.pdf



Back to : buk7506-30_1.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor BUK7506-30
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 30 V
'trench' technology. The device ID Drain current (DC) 75 A
features very low on-state resistance Ptot Total power dissipation 188 W
and has integral zener diodes giving Tj Junction temperature 175