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DISCRETE SEMICONDUCTORS




DATA SHEET




BFQ136
NPN 4 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification


NPN 4 GHz wideband transistor BFQ136

DESCRIPTION PINNING
NPN transistor in a four-lead PIN DESCRIPTION
dual-emitter SOT122A envelope with page 4
1 collector
a ceramic cap. All leads are isolated
from the stud. Diffused 2 emitter 1 3
emitter-ballasting resistors and the 3 base
application of gold sandwich 4 emitter
metallization ensure an optimum
temperature profile and excellent 2
reliability properties. It features
Top view MBK187
extremely high output voltage
capabilities.
Fig.1 SOT122A.
It is primarily intended for final stages
in UHF amplifiers.


QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCEO collector-emitter voltage open base - 18 V
IC DC collector current - 600 mA
Ptot total power dissipation up to Tc = 100