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MJD122(NPN)
TO-251/TO-525-2L Transistor
TO-251

1. BASE

2. COLLECTOR

3. EMITTER

1 2 3
Features
High DC current gain
Electrically similar to popular TIP122
Built-in a damper diode at E-C
TO-252-2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 8 A
PC Collector Power Dissipation 1.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100 V

Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 100 V

Emitter-base breakdown voltage V(BR)EBO IE=3mA,IC=0 5 V

Collector cut-off current ICBO VCB=100V,IE=0 10