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PD - 90338E
IRF250
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6766
HEXFET TRANSISTORS JANTXV2N6766
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF250 200V 0.085 30A
The HEXFETtechnology is the key to International
Rectifier's advanced line of power MOSFET transistors. TO-3
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings
stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switching n Hermetically Sealed
power supplies, motor controls, inverters, choppers, audio n Simple Drive Requirements
amplifiers and high energy pulse circuits. n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25