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N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
60V, 0.3A, RDS(ON) = 6 @VGS = 10V.
RDS(ON) = 6 @VGS = 5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. D
Lead free product is acquired.
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS