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2SC1627A
TO-92MOD Transistor (NPN)
TO-92MOD
1 1. EMITTER 5.800
6.200
2
3 2. COLLECTOR
8.400
3. BASE 8.800
0.900
1.100
Features 0.400
0.600
13.800
14.200
Complementary to 2SA817A
Driver Stage Application of 30 to 35 Watts Amplifiers
1.500 TYP
2.900
3.100
MAXIMUM RATINGS(TA=25 unless otherwise noted) 0.000 1.600
0.380
0.400 4.700
Symbol parameter Value Units 0.500 5.100
VCBO Collector-Base Voltage 80 V 1.730
4.000 2.030
VCEO Collector-Emitter Voltage 80 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.4 A
PC Collector Power Dissipation 0.8 W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A , IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=5mA, IB=0 80 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=50V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE(1) VCE=2 V, IC= 50mA 70 240
DC current gain
hFE(2) VCE=2 V, IC= 200mA 40
Collector-emitter saturation voltage VCE(sat) IC= 200m A, IB= 20mA 0.4 V
Base-emitter voltage VBE(on) VCE= 2V, IC= 5mA 0.55 0.8 V
Transition frequency fT VCE= 10 V, IC= 10mA 100 MHz
CLASSIFICATION OF hFE (1)
Rank O Y
Range 70-140 120-240
2SC1627A
TO-92MOD Transistor (NPN)
Typical Characteristics