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CZT122
SOT-223 Transistor(NPN)
1. BASE
1
2. COLLECTOR
SOT-223
3. EMITTER
Features
Complementary to CZT127
Silicon Power Darlington Transistors
Low speed switching and amplifier applications
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 1 W
Tj Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1m A,IE=0 100 V
Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 100 V
Collector cut-off current ICBO VCB=100V,IE=0 200 uA
Base cut-off current ICEO VCE=50V,IB=0 500 uA
Emitter cut-off current IEBO VEB=5V,IC=0 2 mA
hFE(1) VCE=3V,IC=0.5A 1000
DC current gain
hFE(2) VCE=3V,IC=3A 1000
VCE(sat)1 IC=3A,IB=12mA 2 V
Collector-emitter saturation voltage
VCE(sat)2 IC=5A,IB=20mA 4 V
Base-emitter voltage VBE(on) VCE=3V,IC=3A 2.5 V
Transition frequency fT VCE=4V,IC=3A,f=1MHz 4 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1.0MHz 200 pF
CZT122
SOT-223 Transistor(NPN)
Typical Characteristics
TypicalCharacteristics CZT122