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ST13003-K
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications
1
2
Electronic ballast for fluorescent lighting (CFL) 3
SMPS for battery charger
SOT-32
Description
The device is manufactured using high voltage Figure 1. Internal schematic diagram
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Table 1. Device summary
Part number Marking Package Packaging
ST13003-K 13003 SOT-32 Bag
December 2009 Doc ID 13533 Rev 3 1/10
www.st.com 10
Electrical ratings ST13003-K
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10