Text preview for : phb87n03t_1.pdf part of Philips phb87n03t 1 . Electronic Components Datasheets Active components Transistors Philips phb87n03t_1.pdf



Back to : phb87n03t_1.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor PHB87N03T
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 30 V
suitable for surface mounting using ID Drain current (DC)1 75 A
'trench' technology. The device Ptot Total power dissipation 142 W
features very low on-state resistance Tj Junction temperature 175