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PHP/PHB33NQ20T
N-channel TrenchMOSTM standard level FET
Rev. 01 -- 8 November 2004 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package
using TrenchMOSTM technology.
1.2 Features
s Low on-state resistance s Fast switching
s Low thermal resistance s Low gate charge.
1.3 Applications
s DC-to-DC primary side switching.
1.4 Quick reference data
s VDS 200 V s ID 32.7 A
s RDSon 77 m s Qgd = 9.6 nC (typ).
2. Pinning information
Table 1: Discrete pinning
Pin Description Simplified outline Symbol
1 gate
mb mb D
2 drain [1]
3 source
G
mb mounting base;
connected to drain mbb076 S
2
1 3
1 2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
Philips Semiconductors PHP/PHB33NQ20T
N-channel TrenchMOSTM standard level FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PHP33NQ20T TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead SOT78
TO-220AB
PHB33NQ20T D2-PAK Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25