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SEMICONDUCTOR MJE13005DF
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
A C
Built-in Free wheeling Diode makes efficient anti saturation operation.
DIM MILLIMETERS
Suitable for half bridge light ballast Applications. S
F
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Low base drive requirement. E
C _
2.70 + 0.3
B
MAXIMUM RATING (Ta=25 ) D 0.76+0.09/-0.05
G
E _
3.2 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT F _
3.0 + 0.3
G _
12.0 + 0.3
Collector-Base Voltage VCBO 800 V H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
R
K
Collector-Emitter Voltage VCEO 400 V K _
3.7 + 0.2
L 1.2+0.25/-0.1
M
Emitter-Base Voltage VEBO 10 V M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
DC IC 5 P _
6.8 + 0.1
Collector Current A Q _
4.5 + 0.2
Pulse ICP 10 R _
2.6 + 0.2
N N H S 0.5 Typ
Base Current IB 2 A
Collector Power Dissipation (Tc=25 ) PC 30 W 1. BASE
Junction Temperature Tj 150 2. COLLECTOR
1 2 3
Q
3. EMITTER
Storage Temperature Range Tstg -55 150
Equivalent Circuit
C
TO-220IS
B
ELECTRICAL CHARACTERISTICS (Ta=25 ) E
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 A
hFE(1) VCE=5V, IC=1A 18 - 35
DC Current Gain
hFE(2) VCE=5V, IC=2A 8 - -
IC=1A, IB=0.2A - - 0.5
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.5A - - 0.6 V
IC=4A, IB=1A - - 1
IC=1A, IB=0.2A - - 1.2
Base-Emitter Saturation Voltage VBE(sat) V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=1MHz - 65 - pF
Transition Frequency fT VCE=10V, IC=0.5A 4 - - MHz
OUTPUT
Turn-On Time ton 300