Text preview for : pbss302px.pdf part of Philips pbss302px . Electronic Components Datasheets Active components Transistors Philips pbss302px.pdf
Back to : pbss302px.pdf | Home
PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor
Rev. 02 -- 20 November 2009 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302NX.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -20 V
IC collector current - - -5.1 A
ICM peak collector current single pulse; - - -10.2 A
tp 1 ms
RCEsat collector-emitter IC = -4 A; [1] - 32 48 m
saturation resistance IB = -200 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter
2
2 collector
3 base 3
1
3 2 1 sym079
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS302PX SC-62 plastic surface-mounted package; collector pad for SOT89
good heat transfer; 3 leads
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PBSS302PX *5J
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBSS302PX_2