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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW97
HF power transistor
Product specification August 1986
Philips Semiconductors Product specification
HF power transistor BLW97
DESCRIPTION severe load-mismatch conditions. All
leads are isolated from the flange.
N-P-N silicon planar epitaxial
transistor designed for use in class-A, The transistors are supplied in
AB and B operated high-power matched hFE groups.
industrial and military transmitting
equipment in the h.f. band.
The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand
QUICK REFERENCE DATA
R.F. performance up to Th = 25