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STL25N15F4
N-channel 150 V, 0.057 6 A, PowerFLATTM(5x6)
,
STripFETTM DeepGATETM Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STL25N15F4 150 V < 0.063 6A
N-channel enhancement mode
100% avalanched rated PowerFLATTM(5x6)
Low gate charge
Very low on-resistance
Application
Figure 1. Internal schematic diagram
Switching applications
Description
This STripFETTM DeepGATETM Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
Table 1. Device summary
Order code Marking Package Packaging
STL25N15F4 25N15F4 PowerFLATTM (5x6) Tape and reel
September 2009 Doc ID 16220 Rev 1 1/12
www.st.com 12
Contents STL25N15F4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) ........................... 5
3 Test circuits .............................................. 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/12 Doc ID 16220 Rev 1
STL25N15F4 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 150 V
VGS Gate-source voltage