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PT8822
20V Dual N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), [email protected], Ids@2A = 50m
RDS(ON), [email protected], [email protected] = 32m
RDS(ON), [email protected], [email protected] = 24m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Ideal for Li ion battery pack applications
Package Dimensions
1 8
D1 D2
2 7
S1 S2
3 6
S1 S2
4 5
G1 G2
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 1.10 MAX. L 0.45 REF.
A1 0 0.10 L1 0.60 REF.
A2 0.70 1.00 0