Text preview for : buk7614-55_1.pdf part of Philips buk7614-55 1 . Electronic Components Datasheets Active components Transistors Philips buk7614-55_1.pdf



Back to : buk7614-55_1.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor BUK7614-55
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 55 V
suitable for surface mounting. Using ID Drain current (DC) 68 A
'trench' technology the device Ptot Total power dissipation 142 W
features very low on-state resistance Tj Junction temperature 175