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SEMICONDUCTOR KRA221S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
E
With Built-in Bias Resistors. L B L
DIM MILLIMETERS
Simplify Circuit Design. A _
2.93 + 0.20
Reduce a Quantity of Parts and Manufacturing Process. B 1.30+0.20/-0.15
C 1.30 MAX
D
High Output Current :-800mA. 2 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
EQUIVALENT CIRCUIT BIAS RESISTOR VALUES N 1.00+0.20/-0.10
N
C
P 7
J
TYPE NO. R1(k ) R2(k ) Q Max 0.1.
K
M
KRA221S 1 1
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO -50 V
Input Voltage VI -10, 10 V
Output Current IO -800 mA
Power Dissipation PD 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
MARK SPEC
TYPE KRA221S
MARK PQ
2008. 10. 30 Revision No : 3 1/5
KRA221S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current IO(OFF) VO=-30V, VI=0 - - -10 A
DC Current Gain GI VO=-5V, IO=-50mA 33 - -
Output Voltage VO(ON) IO=-50mA, II=-2.5mA - -0.1 -0.3 V
Input Voltage (ON) VI(ON) VO=-0.3V, IO=-20mA - - -3.0 V
Input Voltage (OFF) VI(OFF) VO=-5V, IO=-0.1mA -0.5 - - V
VO=-10V, IO=-5mA,
Transition Frequency fT* - 200 - MHz
f=100MHz
Input Current II VI=-5V - - -7.2 mA
Input Resistor R1 - 0.1 1 1.3 k
Resistor Ratio R2/R1 - 0.8 1.0 1.2
2008. 10. 30 Revision No : 3 2/5
KRA221S
2008. 10. 30 Revision No : 3 3/5
KRA221S
2008. 10. 30 Revision No : 3 4/5
KRA221S
2008. 10. 30 Revision No : 3 5/5