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Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY FEATURES
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A)
D 100% Rg Tested
0.057 @ VGS = 10 V 3.5
30
0.094 @ VGS = 4.5 V 2.8
-
TO-236
(SOT-23)
G 1
3 D
S 2
Top View
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 3.5
Continuous Drain Current (TJ = 150_C)a, b ID
TA = 70_C 2.8
A
Pulsed Drain Current IDM 16
Continuous Source Current (Diode Conduction)a, b IS 1.25
TA = 25_C 1.25
Maximum Power Dissipationa, b PD W
TA = 70_C 0.80
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 5 sec 100
Maximum Junction to Ambienta
Junction-to-Ambient RthJA _C/W
Steady State 130
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
Document Number: 70827 www.vishay.com
S-31873--Rev. C, 15-Sep-03 1
Si2306DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 10
VDS w 4.5 V, VGS = 10 V 6
On State Drain Currenta
On-State ID( )
D(on) A
VDS w 4.5 V, VGS = 4.5 V 4
VGS = 10 V, ID = 3.5 A 0.046 0.057
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 4.5 V, ID = 2.8 A 0.070 0.094
Forward Transconductancea gfs VDS = 4.5 V, ID = 3.5 A 6.9 S
Diode Forward Voltagea VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 3.5 A 4.2 7
Total Gate Charge Qgt 8.5 20
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 3.5 A
, , 1.9
Gate-Drain Charge Qgd 1.35
Gate Resistance Rg 0.5 2.4 W
Input Capacitance Ciss 555
Output Capacitance Coss ,
VDS = 15 V, VGS = 0 V, f= 1 MHz
, 120 p
pF
Reverse Transfer Capacitance Crss 60
Switching
Turn-On Delay Time td(on) 9 20
Rise Time tr 7.5 18
VDD = 15 V, RL = 15 W
ns
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 17 35
Fall Time tf 5.2 12
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com Document Number: 70827
2 S-31873--Rev. C, 15-Sep-03
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
16 16
VGS = 10 thru 5 V
12 12
I D - Drain Current (A)
I D - Drain Current (A)
8 4V 8
TC = 125_C
4 4
25_C
3 thru 1 V - 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.5 800
700
0.4
r DS(on) - On-Resistance ( W )
Ciss
600
C - Capacitance (pF)
500
0.3
400
0.2
300
Coss
VGS = 4.5 V 200
0.1
VGS = 10 V
100
Crss
0.0 0
0 4 8 12 16 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
8 ID = 3.5 A 1.4 ID = 3.5 A
r DS(on) - On-Resistance (W)
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70827 www.vishay.com
S-31873--Rev. C, 15-Sep-03 3
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.5
0.4
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
0.3
TJ = 150_C
0.2
ID = 3.5 A
TJ = 25_C 0.1
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 12
ID = 250 mA 10
0.2
V GS(th) Variance (V)
- 0.0 8
Power (W)
- 0.2 6
TA = 25_C
- 0.4 4
- 0.6 2
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 500
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
0.1 PDM
0.1
0.05 t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 130_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 500
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70827
4 S-31873--Rev. C, 15-Sep-03
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1