Text preview for : ceu08n6a_ced08n6a.pdf part of CET ceu08n6a ced08n6a . Electronic Components Datasheets Active components Transistors CET ceu08n6a_ced08n6a.pdf



Back to : ceu08n6a_ced08n6a.pdf | Home

CED08N6A/CEU08N6A
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY



FEATURES

600V, 6.2A, RDS(ON) = 1.25 @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead-free plating ; RoHS compliant. D
TO-251 & TO-252 package.




D
G
G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK)
S



ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS