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CEE02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 2.0A, RDS(ON) = 5.0 @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead-free plating ; RoHS compliant.
TO-126 package.
G
CEE SERIES
TO-126
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS