Text preview for : pt4435.pdf part of HT Semiconductor pt4435 . Electronic Components Datasheets Active components Transistors HT Semiconductor pt4435.pdf
Back to : pt4435.pdf | Home
PT4435
30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, [email protected] = 18m
RDS(ON), [email protected], [email protected] = 30m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D D D D
8 7 6 5
1 2 3 4
S S S G
Millimeter Millimeter
REF.
REF. Min. Max. Min. Max.
A 5.80 6.20 M 0.10 0.25
B 4.80 5.00 H 0.35 0.49
C 3.80 4.00 L 1.35 1.75
D 0