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STD7NB20
STD7NB20-1
N-CHANNEL 200V - 0.3 - 7A DPAK/IPAK
PowerMESHTM MOSFET
TYPE VDSS RDS(on) ID
STD7NB20 200 V < 0.40 7A
STD7NB20-1 200 V < 0.40 7A
s TYPICAL RDS(on) = 0.3 3 3
2
s EXTREMELY HIGH dv/dt CAPABILITY 1 1
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED DPAK IPAK
s ADD SUFFIX "T4" FOR ORDERING IN TAPE & TO-252 TO-251
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding INTERNAL SCHEMATIC DIAGRAM
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
VGS Gate- source Voltage