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2SA812
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Complementary to 2SC1623
High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)
High Voltage: Vceo=-50V
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector- Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -100 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB=- 60 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=- 6V, IC= -1mA 90 600
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V
Base-emitter voltage VBE IC=-1mA, VCE=-6V -0.58 -0.68 V
Transition frequency fT VCE=-6V, IC= -10mA 180 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.5 pF
CLASSIFICATION OF hFE
Rank M4 M5 M6 M7
Range 90-180 135-270 200-400 300-600
Marking M4 M5 M6 M7
2SA812
SOT-23 Transistor(PNP)
Typical characteristics