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SEMICONDUCTOR KTX321U
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR
POWER MANAGEMENT.
FEATURES
B
Including two devices in US6. B1
(Ultra Super mini type with 6 leads)
1 6 DIM MILLIMETERS
Simplify circuit design. A _
2.00 + 0.20
C
_
A1
2 5 A1 1.3 + 0.1
A
Reduce a quantity of parts and manufacturing process. B _
2.1 + 0.1
C
3 4 D B1 _
1.25 + 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
EQUIVALENT CIRCUIT (TOP VIEW) _
H 0.9 + 0.1
H
MARKING T T 0.15+0.1/-0.05
6 5 4 6 5 4
G
Lot No.
Q2 1. Q1 EMITTER
BR
Type Name 2. Q1 BASE
Q1 3. Q2 DRAIN
4. Q2 SOURCE
5. Q2 GATE
6. Q1 COLLECTOR
1 2 3 1 2 3
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
US6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -6 V
IC -500 mA
Collector Current
ICP * -1 A
Collector Power Dissipation PC * 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGSS 20 V
DC Drain Current ID 100 mA
Drain Power Dissipation PC ** 150 mW
Channel Temperature Tch 150
Storage Temperature Range Tstg -55 150
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
2008. 9. 23 Revision No : 1 1/6
KTX321U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V
DC Current Gain hFE VCE=-2V, IC=-10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-10mA - -100 -250 mV
Transition Frequency fT VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=100 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A
Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V
Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 25 - - mS
Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 4 7
Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 8.5 - pF
Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 3.3 - pF
Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 9.3 - pF
Turn-on Time ton - 50 - nS
Switching Time VDD=5V, ID=10mA, VGS=0 5V
Turn-off Time toff - 160 - nS
2003. 11. 20 Revision No : 1 2/6
KTX321U
Q1 (PNP TRANSISTOR)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
1K -1K
I C /IB =20
Ta=125 C -500
DC CURRENT GAIN hFE
500
VOLTAGE VCE(sat) (mV)
Ta=25 C -300
300
Ta=-40 C
-100
C
-50 125
Ta=
100 -30
25 C C
Ta= =-40
T a
50 -10
30 -5
-3
VCE =-2V
10 -1
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC VBE(sat) - IC
COLLECTOR-EMITTER SATURATION
-1K -10K
BASE-EMITTER SATURATION
Ta=25 C I C /IB =20
-500
-5K
VOLTAGE VCE(sat) (mV)
VOLTAGE VBE(sat) (mV)
-300
-3K
-100
-50 I C /IB =50
-30 -1K Ta=-40 C
I C /IB =20
I C /IB =10
-10 -500 Ta=25 C C
Ta=125
-5 -300
-3
-1 -100
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
IC - VBE fT - IC
TRANSITION FREQUENCY fT (MHz)
-1K 1K
COLLECTOR CURRENT IC (mA)
VCE =-2V VCE =-2V
-500 Ta=25 C
-300 500
300
-100
-50
5 C
C
40 C
-30 100
5
2
Ta=2
Ta=1
Ta=-
-10 50
-5 30
-3
-1 10
0 -0.5 -1.0 -1.5 -1 -3 -10 -30 -100 -300 -1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)
2008. 9. 23 Revision No : 1 3/6
KTX321U
Cob - VCB , Cib - VEB Pc - Ta
COLLECTOR POWER DISSIPATION PC (mW)
COLLECTOR OUTPUT CAPACITANCE Cob (PF)
COLLECTOR INPUT CAPACITANCE Cib (PF)
1K 200
I E =0A
500 f=1MHz
Ta=25 C
300
150
100
50 100
30
C ib
50
10
5 C ob
3 0
0 25 50 75 100 125 150
1
-0.1 -0.3 -1 -3 -10 -30 -100 AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
2008. 9. 23 Revision No : 1 4/6
KTX321U
Q2 (N CHANNEL MOS FIELD EFFECT TRANSISTOR)
ID - VDS ID - VDS
(LOW VOLTAGE REGION)
100 1.0
2.5V COMMON SOURCE 2.5V 1.2V COMMON
SOURCE
DRAIN CURRENT ID (mA)
DRAIN CURRENT ID (mA)
Ta=25 C 1.15V Ta=25 C
80 2.2V 0.8
60 2.0V 0.6
1.1V
40 1.8V 0.4
1.05V
1.6V
20 0.2 1.0V
1.4V
VGS =1.2V VGS =0.9V
0 0
0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
IDR - VDS ID - VGS
DRAIN REVERSE CURRENT IDR (mA)
100 100
COMMON SOURCE
DRAIN CURRENT ID (mA)
30 COMMON SOURCE 30 VDS =3V
VGS =0
10 10
Ta=25 C
3 3
C
100
1 D 1
Ta=
Ta=25 C
0.3 G I DR 0.3
Ta=-25 C
0.1 S 0.1
0.03 0.03
0.01 0.01
0 -0.4 -0.8 -1.2 -1.6 0 1 2 3 4 5
DRAIN-SOURCE VOTAGE VDS (V) GATE-SOURCE VOTAGE VGS (V)
Yfs - ID C - VDS
FORWARD TRANSFER ADMITTANCE
300 100
COMMON SOURCE COMMON SOURCE
V DS =3V 50 VGS =0
CAPACITANCE C (pF)
Ta=25 C f=1MHz
30
100 Ta=25 C
C oss
Yfs (mS)
50 C iss
10
30
5
3
C rss
10
5 1
1 3 5 10 30 50 100 0.1 0.3 0.5 1 3 5 10
20
DRAIN CURRENT ID (mA) DRAIN-SOURCE VOLTAGE VDS (V)
2008. 9. 23 Revision No : 1 5/6
KTX321U
VDS(ON) - ID t - ID
2 1K
DRAIN-SOURCE ON VOLTAGE
COMMON SOURCE
1 VGS =2.5V 500
SWITCHING TIME t (ns)
0.5 Ta=25 C
300
0.3 t on
VDS(ON) (V)
tr
0.1 100 t off
tf
0.05 50 VDD =5V
ID VOUT
0.03 5V D.U. < 1%
=
30 V IN
VIN :t r , t f < 5ns
0
RL
(Z OUT =50)
50
10