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2SC5343

TRANSISTOR (NPN)
FEATURES SOT-23
Excellent hFE Linearity
Low Noise.

MAXIMUM RATINGS (TA=25 unless otherwise noted)
1. BASE
Symbol Parameter Value Units
2. EMITTER
VCBO Collector-Base Voltage 60 V
3. COLLECTOR
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
Ib Base Current -Continuous 50 mA
PC Collector Power dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V

Collector cut-off current ICBO VCB=60V,IE=0 0.1 A

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A

DC current gain hFE(1) VCE=6V,IC=2mA 70 700

Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.1 0.25 V

Transition frequency fT VCE=10V,IC=1mA 80 MHz

Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF

VCE=6V,Ic=0.1mA,
Noise figure NF 10 dB
f=1KHZ,Rg=10K

CLASSIFICATION OF hFE
Rank O Y G L

Range 70-140 120-240 200-400 300-700

1

JinYu www.htsemi.com
semiconductor
2SC5343

2

JinYu www.htsemi.com
semiconductor