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SEMICONDUCTOR KU082N03Q
TECHNICAL DATA N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
TENTATIVE
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack..
H
FEATURES T
D P G L
VDSS=30V, ID=14A.
U
Drain to Source On Resistance.
RDS(ON)=8.2m (Max.) @ VGS=10V A
RDS(ON)=14.7m (Max.) @ VGS=4.5V DIM MILLIMETERS
A _
4.85 + 0.2
B1 _
3.94 + 0.2
8 5 _
B2 6.02 + 0.3
D _
0.4 + 0.1
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) B1 B2 G 0.15+0.1/-0.05
CHARACTERISTIC SYMBOL RATING UNIT 1 H _
1.63 + 0.2
4
L _
0.65 + 0.2
Drain to Source Voltage VDSS 30 V P 1.27
T 0.20+0.1/-0.05
Gate to Source Voltage VGSS 20 V U 0.1 MAX
DC@Ta=25 (Note 1) ID 14 A
Drain Current
Pulsed IDP 56 A
Drain Power Dissipation @Ta=25 (Note 1) PD 2.5 W FLP-8
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient (Note 1) RthJA 50 /W
Note1) Surface Mounted on 25.4mm 25.4mm FR4 Board, t 10sec.
KU082N
03Q
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2010. 7. 13 Revision No : 0 1/2
KU082N03Q
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 A
Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 V
VGS=10V, ID=14A (Note2) - 6.6 8.2
Drain to Source On Resistance RDS(ON) m
VGS=4.5V, ID=14A (Note2) - 11.8 14.7
Forward Transconductance gfs VDS=5V, ID=14A (Note2) - 55 - S
Dynamic
Input Capaclitance Ciss - 1265 -
Ouput Capacitance Coss VDS=15V, VGS=0V, f=1MHz (Note2) - 266 - pF
Reverse Transfer Capacitance Crss - 198 -
Gate Resistance Rg f=1MHz - 2.9 -
VGS=10V - 29.9 -
Total Gate Charge Qg
VGS=4.5V - 16.6 -
VDS=15V, VGS=10V, ID=14A (Note2) nC
Gate to Source Charge Qgs - 3.6 -
Gate to Drain Charge Qgd - 7.2 -
Turn-On Delay Time td(on) - 8.4 -
Turn-On Rise Time tr VDS=15V, VGS=10V - 13.0 -
ns
Turn-Off Delay Time td(off) ID=14A, RG=1.6 (Note2) - 32.2 -
Turn-Off Fall Time tf - 9.2 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage VSD VGS=0V, IS=14A (Note2) - 0.8 1.2 V
Reverse Recovery Time trr IS=14A, dI/dt=100A/ s - 21.1 - ns
Reverse Recovered Charge Qrr IS=14A, dI/dt=100A/ s - 9.3 - nC
Note2) Pulse Test : Pulse Width 300 , Duty Cycle 2%
2010. 7. 13 Revision No : 0 2/2