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Preliminary Technical Information

TrenchMVTM IXTH160N10T VDSS = 100 V
Power MOSFET IXTQ160N10T ID25 = 160 A
RDS(on) 7.0 m
N-Channel Enhancement Mode TO-247 (IXTH)
Avalanche Rated

Symbol Test Conditions Maximum Ratings
G
D (TAB)
V DSS TJ = 25