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SEMICONDUCTOR KTC3730V
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
E
FEATURES B
Low Noise Figure, High Gain.
Small rbb'Cc (Typ. 4pS).
2 DIM MILLIMETERS
A _
1.2 +0.05
D
G
A
B _
0.8 +0.05
H
1 3 _
C 0.5 + 0.05
K
D _
0.3 + 0.05
E _
1.2 + 0.05
MAXIMUM RATING (Ta=25 ) G _
0.8 + 0.05
P P H 0.40
CHARACTERISTIC SYMBOL RATING UNIT J _
0.12 + 0.05
K _
0.2 + 0.05
Collector-Base Voltage VCBO 20 V P 5
C
Collector-Emitter Voltage VCEO 11 V
J
Emitter-Base Voltage VEBO 3 V
1. EMITTER
Collector Current IC 50 mA 2. BASE
3. COLLECTOR
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 VSM
Marking
Type Name
R h FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 500 nA
Emitter Cut-off Current IEBO VEB=2V, IC=0 - - 0.5 A
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=5mA - - 0.5 V
DC Current Gain hFE (Note) VCE=10V, IC=5mA 56 - 180
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 0.8 1.5 pF
Collector-Base Time Constant rbb'Cc VCE=10V, IE=10mA, f=31.8MHz - 4 12 pS
Transition Frequency fT VCE=10V, IC=10mA, f=500MHz 1.4 3.2 - GHz
VCE=6V, IC=2mA,
Noise Figure NF - 3.5 - dB
f=500MHz, Rg=50
Note) hFE Classification : F:56~120, G:82~180
2004. 1. 28 Revision No : 1 1/3
KTC3730V
TYPICAL CHARACTERISTICS (Ta=25 C)
Pc - Ta C ob , C re - VCB
REVERSE TRANSFER CAPACITANCE C re (pF)
COLLECTOR POWER DISSIPATION P C (mW)
300 5
OUTPUT CAPACITANCE Cob (pF)
f=1MHz
3 I E =0A
200
1 C ob
0.5 C re
100
0.3
0 0.1
0 50 100 150 0.1 0.3 0.5 1 3 5 10 30 50
AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V)
2
h FE - I C S 2le - IC
500 15
(dB)
VCE =10V
300
DC CURRENT GAIN h FE
2
INSERTION GAIN S 2le
10
100
50
5
30
VCE =10V
f=500MHz
10 0
0.1 0.3 0.5 1 3 5 10 30 50 0.5 1 3 5 10 30 50
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2
VCE(sat) - I C S 2le - f
COLLECTOR SATURATION VOLTAGE
500 30
VCE =10V
(dB)
300 I C =10mA
25
2
INSERTION GAIN S 2le
VCE(sat) (mW)
20
100
15
50 I C /I B =10
10
30
5
I C /I B =2
10 0
0.1 0.3 0.5 1 3 5 10 30 50 0.1 0.3 0.5 1 3
COLLECTOR CURRENT I C (mA) FREQUENCY f (GHz)
2004. 1. 28 Revision No : 1 2/3
KTC3730V
f T - IE rbb. Cc - I C
5 50
COLLECTOR BASE TIME CONSTANT
TRANSITION FREQUENCY f T (GHz)
VCE =10V
3 30 f=31.8MHz
Cc. rbb (ps)
1 10
0.5 5
0.3 3
VCE =10V
0.1 1
-0.1 -0.3-0.5 -1 -3 -5 -10 -30 -50 0.1 0.3 0.5 1 3 5 10 30 50
EMITTERCURRENT I E (mA) COLLECTOR CURRENT I C (mA)
2
NF - I C S 2le - VCE
20 25
VCE =6V IC =10mA
(dB)
f=500MHz f=500MHz
NOISE FIGURE NF (dB)
20
2
INSERTION GAIN S 2le
15
10
10
5
0 0
0.1 0.3 0.5 1 3 5 10 30 50 0 2 4 6 8 10
COLLECTOR CURRENT I C (mA) COLLECTOR EMITTER VOLTAGE VCE (V)
NF - VCE
25
IC =10mA
f=500MHz
NOISE FIGURE NF (dB)
20
15
10
5
0
0 2 4 6 8 10
COLLECTOR EMITTER VOLTAGE VCE (V)
2004. 1. 28 Revision No : 1 3/3