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BC847S
Dual General Purpose Transistor 3 2 1
6 5
NPN Silicon
4
1
P b Lead(Pb)-Free 2
3
4 5 6 SOT -363(SC-88)
NPN+NPN
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 200 mA
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation TA=25 C PD 200 mW
Junction Temperature TJ +150