Text preview for : hm879.pdf part of HT Semiconductor hm879 . Electronic Components Datasheets Active components Transistors HT Semiconductor hm879.pdf



Back to : hm879.pdf | Home

HM879

TRANSISTOR (NPN)
SOT-89-3L


FEATURES
High Current 1. BASE
Low Voltage
2. COLLECTOR
General Purpose Amplifier Applications
3. EMITTER




MARKING:879


MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 10 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 3 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150


ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10