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PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Rev. 01 -- 31 August 2009 Product data sheet




1. Product profile

1.1 General description
NPN/PNP double switching transistor in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview
Type number Package NPN/NPN PNP/PNP
NXP JEITA complement complement

PMBT3946VPN SOT666 - PMBT3904VS PMBT3906VS


1.2 Features
I Double general-purpose switching transistor
I Board-space reduction
I Ultra small and flat lead SMD plastic package

1.3 Applications
I General-purpose switching and amplification

1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 40 V
IC collector current - - 200 mA
TR1 (NPN)
hFE DC current gain VCE = 1 V; 100 180 300
IC = 10 mA
TR2 (PNP)
hFE DC current gain VCE = -1 V; 100 180 300
IC = -10 mA
NXP Semiconductors PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor



2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1

5 base TR2
1 2 3 1 2 3
6 collector TR1
sym019




3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PMBT3946VPN - plastic surface-mounted package; 6 leads SOT666


4. Marking
Table 5. Marking codes
Type number Marking code
PMBT3946VPN ZE


5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1 (NPN)
VCBO collector-base voltage open emitter - 60 V
TR2 (PNP)
VCBO collector-base voltage open emitter - -40 V
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 6 V
IC collector current - 200 mA
ICM peak collector current single pulse; - 200 mA
tp 1 ms
IBM peak base current single pulse; - 100 mA
tp 1 ms
Ptot total power dissipation Tamb 25