d882_to-126.pdf part of LGE d882 to-126 d882_to-126.pdf, . Electronic Components Datasheets Active components Transistors LGE d882

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D882(NPN)
TO-126 Transistor
TO-126
2.500
7.400
7.800 1.100 2.900
1. EMITTER 1.500

3.900
2. COLLECTOR 3.000
4.100
3.200
10.60 0 0.000
3. BASE 11.00 0
3 0.300
2
Features 1
2.100
2.300

Power dissipation 1.170
1.370
15.30 0
MAXIMUM RATINGS (TA=25 unless otherwise noted) 15.70 0

Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V 0.660
0.860
VCEO Collector-Emitter Voltage 30 V
0.450
0.600
VEBO Emitter-Base Voltage 6 V 2.290 TYP
4.480
4.680
IC Collector Current -Continuous 3 A
PD Collector Power Dissipation 1.25 W
Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V

Collector cut-off current ICBO VCB= 40 V, IE=0 1