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2SD2137(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
MAXIMUM RATINGS(TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=30mA, IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 100 A
Emitter cut-off current IEBO VEB=6V, IC=0 100 A
hFE(1) VCE=4V, IC=1A 70 320
DC current gain
hFE(2) VCE=4V, IC=3A 10
Collector-emitter saturation voltage VCE(sat) IC=3A, IB=375mA 1.2 V
Base-emitter voltage VBE VCE=4V, IC=3A 1.8 V
Transition frequency fT VCE=5V, IC=0.2A, f=10MHz 30 MHz
Turn-on time ton 0.3 s
Switch time Storage time tstg VCC=50V,IC=1A, IB1=-IB2=0.1A 2.5 s
Fall time tf 0.2 s
CLASSIFICATION OF hFE(1)
Rank Q P O
Range 70-150 120-250 160-320
2SD2137(NPN)
TO-220 Transistor
Typical Characteristics