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Philips Semiconductors Product specification

TrenchMOSTM transistor PHB80N06LT
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 55 V
mounting. Using 'trench' technology ID Drain current (DC)1 75 A
the device features very low on-state Ptot Total power dissipation 178 W
resistance and has integral zener Tj Junction temperature 175