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BC847BV
SOT-563 Dual Transistor (NPN)
SOT-563
1.600
Features 1.200 1.600
Epitaxial Die Construction
Complementary PNP Type Available 0.220
(BC857BV) 0.500
Ultra-Small Surface Mount Package
0.565
Marking: K4V
MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 0.15 W
RJA Thermal Resistance. Junction to Ambient Air 833 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=1A,IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 15 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
DC current gain hFE(1) VCE=5V,IC=2mA 200 450
IC=10mA,IB=0.5mA 100
Collector-emitter saturation voltage VCE(sat) mV
IC=100mA,IB=5mA 300
IC=10mA,IB=0.5mA 700
Base-emitter saturation voltage VBE(sat) mV
IC=100mA,IB=5mA 900
VCE=5V,IC=2mA 580 660 700
Base-emitter voltage VBE mV
VCE=5V,IC=10mA 770
Transition frequency fT VCE=5V,IC=10mA,f=100MHz 100 MHz
Output capacitance Cob VCB=10V,IE=0,f=1MHz 4.5 pF
VCE=5V,Rs=2k,
Noise Figure NF 10 dB
f=1kHz,BW=200Hz
BC847BV
SOT-563 Dual Transistor (NPN)
Typical Characteristics