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PHP/PHB/PHD108NQ03LT
TrenchMOSTM logic level FET
Rev. 02 -- 11 September 2002 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM technology.
Product availability:
PHP108NQ03LT in SOT78 (TO-220AB)
PHB108NQ03LT in SOT404 (D2-PAK)
PHD108NQ03LT in SOT428 (D-PAK).
1.2 Features
s Logic level compatible s Very low on-state resistance
1.3 Applications
s DC to DC converters s Switched mode power supplies
1.4 Quick reference data
s VDS = 25 V s ID = 75 A
s Ptot = 180 W s RDSon 6 m
2. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb mb d
2 drain (d) [1]
3 source (s)
g
mb mounting base,
connected to MBB076 s
drain (d) 2
2 1 3
1 3 MBK116 Top view MBK091
MBK106
1 2 3
SOT78 (TO-220AB) SOT404 (D2-PAK) SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
Philips Semiconductors PHP/PHB/PHD108NQ03LT
TrenchMOSTM logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25