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SEMICONDUCTOR KTA1725
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
Complementary to KTC4511. S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
MAXIMUM RATING (Ta=25 ) M
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
J
CHARACTERISTIC SYMBOL RATING UNIT D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Base Voltage VCBO -80 V Q _
4.5 + 0.2
R _
2.6 + 0.2
N N H
Collector-Emitter Voltage VCEO -80 V S 0.5 Typ
Emitter-Base Voltage VEBO -6 V
Collector Current IC -6 A 1. BASE
Q
1 2 3
2. COLLECTOR
Base Current IB -3 A 3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 30 W
Junction Temperature Tj 150 TO-220IS
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -10 A
Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-25mA, IB=0 -80 - - V
DC Current Gain hFE(Note) VCE=-4V, IC=-2A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A - - -0.5 V
Transition Frequency fT VCE=-12V, IC=-0.5A - 20 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 150 - pF
Note : hFE Classification R:55~110, O:80~160.
2007. 5. 21 Revision No : 1 1/3
KTA1725
I C - VCE VCE(sat) - I B
COLLECTOR-EMITTER SATURATION
-6 A
-3
A 0m
COLLECTOR CURRENT I C (A)
5 I C =-100mA
0m =-1
20 IC
=- I =-80mA
VOLTAGE VCE(sat) (V)
IC C
-4 I C =-50mA -2
I C =-30mA
I C =-20mA
-2 -1
I C =-10mA I C=-6A
I C=-4A
I C=-2A
0 0
0 -1 -2 -3 -4 0 -0.5 -1.0 -1.5
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE CURRENT I B (A)
I C - V BE h FE - I C
-6 1k
V CE =-4V VCE =-4V
COLLECTOR CURRENT I C (A)
500
DC CURRENT GAIN h FE
300
Tc=125 C
-4
Tc=25 C
100
Tc=-30 C
50
C
-2
C
25
C
30
=1
-30
5
Tc
=2
Tc=
Tc
0 10
0 -1 -1.5 -0.01 -0.03 -0.1 -0.3 -1 -3 -10
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (A)
h FE - I C R th - t
TRANSIENT THERMAL RESISTANCE
1k VCE =-4V 1k
1 NO HEAT SINK
500 2 INFINITE SINK
DC CURRENT GAIN h FE
300 100 1
Tc=125 C
r th ( C/W)
Tc=25 C
100 Tc=-30 C 10
2
50
30 1
10 0.1
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 0.001 0.01 0.1 1 10 100 1k
COLLECTOR CURRENT I C (A) TIME t (S)
2007. 5. 21 Revision No : 1 2/3
KTA1725
fT - IE SAFE OPERATING AREA
30
VCE =-12V
CUT-OFF FREQUENCY f T (MHz)
-30 I C MAX.(PULSED)
COLLECTOR CURRENT IC (A)
C -10
5
20 12 100ms* 10
c=
T 5 C ms
=2 -5 *
Tc C DC
0 -3 (T
=-3 c=
Tc 25
C)
10 -1
-0.5
-0.3
0 *SINGLE NONREPETITIVE
PULSE Tc=25 C
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 CURVES MUST BE DERATED
-0.1
LINEARLY WITH INCREASE
EMITTER CURRENT I E (A) IN TEMPERATURE
-0.05
-3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
Pc - Ta
MAXIMUM POWER DISSIPATION PC (W)
-40
(1)Tc=Ta
INFINITE HEAT SINK
-30 (2)NO HEAT SINK
-25 (1)
-20
-15
-10
-5
(2)
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
2007. 5. 21 Revision No : 1 3/3