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IPB039N10N3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H )(( J
P ' 3 81>>5< >? A
=1<<
5E5<
R 9H"[Z#$YMc +&1 Y"
P G 5<5>C71C 3 81A GR 9H"[Z# @A 4D C ( &
3 < 5 75 ? 3
I9 ).( 6
P. 5A < F ? >A 9C 5 R 9H"[Z#
H? 5BB1>3
P " 9 3 D A 3 1@12 9C
78 A5>C 9
P S ? @5A 9 C
1C 5=@5A D 5
>7 1C A
P ) 2 655 <
A 514 @< 9 + ? " , 3 ? =@<1>C
1C>7 9
)#
P * D 954 13 3 ? A >7 C $
9
1<6 49 ? ? 1A 9 9 ?
6 AC 75C1@@<3 1C >
P" 1< 75>655 13 3 ? A >7 C #
? A 49 ?
Type #) ' ' !
Package E=%ID*.+%/
Marking (+1C)(C
Maximum ratings, 1CT V S D 5B ? C F95 B 954
>< B 85A B @53 6
9
Parameter Symbol Conditions Value Unit
*#
9
? >C ? D 4A > 3 D A
>D B 19 A5>C I9 T 8 S ).( 6
T 8 S ))+
) DB 4A > 3 D A *#
< 54 19 A5>C I 9$\`X^Q T 8 S .,(
1>3
E1< 85 5>5A B>7< @DB
7H 9 5 < 5 E 6H I 9 R =H " +,( Y@
!1C B D 3 5 E? <175
5 ? A C V =H p*( J
B9 9
) ? F5A49B@1C >
? P _[_ T 8 S *), K
( @5A 9 1>4 B? A
1C>7 C 175 C
5=@5A D 5
1C A T V T ^_S
S
# 3 <=1C 3 1C A #' #
9 93 57? H
)#
$ , - 1>4 $ ,
*#
, 55 67D 5
9 A
+ 5E
@175
IPB039N10N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
-85A=1 3 1B
5BB1>3 >3 9
? 5 R _T@8 % % (&/ A'K
-85A=1 5BB1>3 R _T@6 >9
=9 =1<6 ? C 9
? @A>C
:D C > 1=2 9
>3 9
? 5>C 3 = * 3 ? ? <>7 1A +#
9 51 % % ,(
Electrical characteristics, 1CT V S D 5B ? C F95 B 954
>< B 85A B @53 6
9
Static characteristics
A >B D 3 5 2 A
19 ? A 51;4? F> E? <175
C V "7G#9HH V =H . I 9 = )(( % % J
!1C C 5B < E? <175
5 8A 8? 4 C V =H"_T# V 9H4V =H I 9 U * *&/ +&-
V 9H . V =H .
05A 71C E? <175 4A > 3 D A
? 5 C 19 A5>C I 9HH % (&) ) q6
T V S
V 9H . V =H .
% )( )((
T V S
!1C ? D 3 5 <
5B A 51;175 3 D A
A5>C I =HH V =H . V 9H . % ) )(( Z6
A >B D 3 5 ? >B1C A 9C 5
19 ? A C 5 5BB1>3 R 9H"[Z# V =H . I 9 % +&+ +&1 Y"
V =H . I 9 % ,&) /&)
!1C A 9C 5
5 5BB1>3 R= % )&, % "
fV 9Hf5*fI 9fR 9H"[Z#YMc
I]MZ^O[ZP`O_MZOQ g R^ /. )-* % H
I 9
+#
5E95 ? > == G == G
== 5@? G )
3 H + F9 3 =* ? >5 <
C8 1H5A U = C 3 ; 3 ? @@5A1A 6 A4A >
89 51 ? 19
?
9 B C
3 ? >>53 C >
) 9 E5A91<9 B9 19
3 > C< A
<
+ 5E
@175
IPB039N10N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
#>@D 3 1@13 9 5
C C1>3 C U^^ % .+*( 0,)( \<
V =H . V 9H .
( D @D 3 1@13 9 5
C C C1>3 C [^^ % )*)( ).)(
f & " I
+ 5E5A 5 C1>B5A3 1@13 9 5
B A 6 C1>3 C ]^^ % ,) %
-D >? > 45< C
A 1H 9
=5 t P"[Z# % */ % Z^
+ 95 C
B 9 =5 t] V 99 . V =H . % -1 %
-D >? 6 45< C
A 6 1H 9 =5 t P"[RR# I 9 R =
" % ,0 %
1< C
<9 =5 tR % ), %
13 5AB9 ,#
!1C 81A 81A C 9C B
5 S5 3
!1C C B D 3 5 3 81A
5 ? ? A 75 Q S^ % *1 +1 Z8
!1C C 4A > 3 81A
5 ? 19 75 Q SP % ). %
V 99 . I 9
, F9 89 3 81A
C >7
3 75 Q ^b % *. %
V =H C .
?
5
!1C 3 81A C C
75 ? 1< QS % 00 ))/
!1C @< 51D E? <175
5 1C C V \XM_QM` % ,&. % J
( D @D 3 81A
C C 75 Q [^^ V 99 . V =H . % )** ).* Z8
Reverse Diode
9 45 3 ? >C D 6 A 4 3 D A
? 9 B ? F1A
>? A5>C IH % % ).( 6
T 8 S
?
9 45 @DB 3 D A
< 5 A5>C I H$\`X^Q % % .,(
V =H . I <
9 45 6 A 4 E? <175
? ? F1A C V H9 % ) )&* J
T V S
+ 5E5A 5 A ? E5A C
B 53 H9=5 t ]] V G . I <4100A % .0 % Z^
Q ]] Pi <'Pt U B
B 53 H 75
+ 5E5A 5 A ? E5A 3 81A % )+- % Z8
,#
, 55 67D 5 6 A71C 3 81A @1A
9 A ? 5 75 1=5C 456>9? >
5A 9 C 9
+ 5E
@175
IPB039N10N3 G
1 Power dissipation 2 Drain current
P _[_4R"T 8# I 94R"T 8 V =H" .
250 180
160
200
140
120
150
P tot [W]
100
I D [A] 80
100
60
50 40
20
0 0
0 50 100 150 200 0 50 100 150 200
T C [