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DISCRETE SEMICONDUCTORS
DATA SHEET
BFM520
Dual NPN wideband transistor
Product specification 1996 Oct 08
Supersedes data of 1995 Sep 04
NXP Semiconductors Product specification
Dual NPN wideband transistor BFM520
FEATURES PINNING - SOT363A
Small size PIN SYMBOL DESCRIPTION
Temperature and hFE matched 1 b1 base 1
Low noise and high gain 2 e1 emitter 1
High gain at low current and low capacitance at low 3 c2 collector 2
voltage
4 b2 base 2
Gold metallization ensures excellent reliability. 5 e2 emitter 2
6 c1 collector 1
APPLICATIONS
Oscillator and buffer amplifiers
6 5 4
Balanced amplifiers handbook, halfpage c1 c2
LNA/mixers.
b1 b2
DESCRIPTION
e1 e2
Dual transistor with two silicon NPN RF dies in a surface 1 2 3
mount 6-pin SOT363 (S-mini) package. The transistor is Top view MAM210
primarily intended for wideband applications in the
Marking code: N2.
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
Fig.1 Simplified outline and symbol.
satellite TV-tuners.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Any single transistor
Cre feedback capacitance Ie = 0; VCB = 3 V; f = 1 MHz 0.4 pF
fT transition frequency IC = 20 mA; VCE = 3 V; f = 900 MHz 9 GHz
2 insertion power gain IC = 20 mA; VCE = 3 V; 13 14.5 dB
s 21
f = 900 MHz; Tamb = 25 C
GUM maximum unilateral power gain IC = 20 mA; VCE = 3 V; 15 dB
f = 900 MHz; Tamb = 25 C
F noise figure IC = 5 mA; VCE = 3 V; 1.2 1.6 dB
f = 900 MHz; S = opt
Rth j-s thermal resistance from junction single loaded 230 K/W
to soldering point double loaded 115 K/W
1996 Oct 08 2
NXP Semiconductors Product specification
Dual NPN wideband transistor BFM520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Any single transistor
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 8 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 70 mA
Ptot total power dissipation up to Ts = 118 C; note 1 1 W
Tstg storage temperature 65 +175 C
Tj junction temperature 175 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction single loaded 230 K/W
to soldering point; note 1 double loaded 115 K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08 3
NXP Semiconductors Product specification
Dual NPN wideband transistor BFM520
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V(BR)CBO collector-base breakdown voltage IC = 2.5 A; IE = 0 20 V
V(BR)CEO collector-emitter breakdown voltage IC = 10 A; IB = 0 8 V
V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0 2.5 V
ICBO collector-base leakage current VCB = 6 V; IE = 0 50 nA
hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250
DC characteristics of the dual transistor
hFE ratio of highest and lowest DC IC1 = IC2 = 20 mA; 1 1.2
current gain VCE1 = VCE2 = 6 V
VBEO difference between highest and IE1 = IE2 = 30 mA; Tamb = 25 C 0 1 mV
lowest base-emitter voltage
(offset voltage)
AC characteristics of any single transistor
fT transition frequency IC = 20 mA; VCE = 3 V; f = 1 GHz 9 GHz
Cc collector capacitance IE = ie = 0; VCB = 3 V; f = 1 MHz 0.5 pF
Cre feedback capacitance IC = 0; VCB = 3 V; f = 1 MHz 0.4 pF
GUM maximum unilateral power gain; IC = 20 mA; VCE = 3 V; 15 dB
note 1 Tamb = 25 C; f = 900 MHz
IC = 20 mA; VCE = 3 V; 9 dB
Tamb = 25 C; f = 2 GHz
2 insertion power gain IC = 20 mA; VCE = 3 V; 13 14.5 dB
s 21
f = 900 MHz; Tamb = 25 C
F noise figure IC = 5 mA; VCE = 3 V; 1.2 1.6 dB
f = 900 MHz; S = opt
IC = 20 mA; VCE = 3 V; 1.7 2.1 dB
f = 900 MHz; S = opt
IC = 5 mA; VCE = 3 V; 1.9 dB
f = 2 GHz; S = opt
Note
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB
1