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2SB1198K
SOT-23-3L Transistor(PNP)
1. BASE SOT-23-3L
2. EMITTER
2.92
3. COLLECTOR 0.35
1.17
Features
2.80 1.60
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA)
High breakdown voltage BVCEO=-80V
Complements the 2SD1782K 0.15
1.90
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A, IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -80 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.5 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -0.5 A
DC current gain hFE(1) VCE=-3V, IC=-100mA 120 390
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.5 V
Transition frequency fT VCE=-10V, IC=-50mA, f=100MHz 180 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 11 pF
CLASSIFICATION OF hFE(1)
Rank Q R
Range 120-270 180-390
MARKING AKQ AKR
2SB1198K
SOT-23-3L Transistor(PNP)
Typical Characteristics